Characteristics of silicon nitride after O2 plasma surface treatment for pH-ISFET applications

IEEE Transactions on Biomedical Engineering

Volumn 48, Issue 3, 2001, Pages 340-344

  Yin, Li Te ^a   Chou, Jung Chuan ^b   Chung, Wen Yaw ^a   Sun, Tai Ping ^c   Hsiung, Shen Ken ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

Enzyme immobilization; ISFET; pH sensitivity; Plasma treatment; Silicon nitride

Indexed keywords

ELECTRON SPECTROSCOPY; MICROWAVE DEVICES; SILICON NITRIDE; SURFACE TREATMENT; TRANSISTORS;

ADHESION PROMOTER; PLASMA TREATMENT;

BIOMEDICAL ENGINEERING;

3 AMINOPROPYLTRIETHOXYSILANE; GLUCOSE OXIDASE; GLUTARALDEHYDE; SILICON NITRIDE;

ARTICLE; CHEMICAL ANALYSIS; CHEMICAL REACTION; CHEMICAL STRUCTURE; ENZYME IMMOBILIZATION; ISOELECTRIC FOCUSING; PH; REACTION ANALYSIS;

GLUCOSE OXIDASE; GLUTARAL; HYDROGEN-ION CONCENTRATION; ION-SELECTIVE ELECTRODES; MATERIALS TESTING; MICROWAVES; OXYGEN; SENSITIVITY AND SPECIFICITY; SILANES; SILICON COMPOUNDS; SURFACE PROPERTIES; TRANSISTORS;

EID: 0035088858     PISSN: 00189294     EISSN: None     Source Type: Journal    
DOI: 10.1109/10.914797     Document Type: Article

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