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Volumn 1, Issue 2, 2008, Pages

Epitaxial lift-off of InGaAs/InAIAs metamorphlc high electron mobility heterostryctures and their van der waals bonding on AIN ceramic substrates

(4) Jeong, Yonkil a Shindo, Masanori a Akabori, Masashi a,b Suzuki, Toshi Kazu a

a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; ELECTRICAL ENGINEERING; ELECTRON MOBILITY; GALLIUM; GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; HETEROJUNCTIONS; SUBSTRATES; THICK FILMS; VAN DER WAALS FORCES;

AIN CERAMICS; GAAS(001); GRADED BUFFERS; HETEROSTRUCTURES; HIGH ELECTRON MOBILITIES; METAMORPHIC DEVICES; METAMORPHIC HETEROSTRUCTURE; ROOM TEMPERATURES; SACRIFICIAL LAYERS; VAN DER WAALS;

MAGNETIC FIELD EFFECTS;

EID: 57049147477 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.021201 Document Type: Article

Times cited : (9)

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