Crystallographic Silicon-etching for ultra-high aspect-ratio FinFET

ECS Transactions

Volumn 13, Issue 1, 2008, Pages 313-320

  Jovanovic V ^a   Suligoj, T ^a   Nanver, L K ^b  

^a UNIVERSITY OF ZAGREB   (Croatia)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE PARTS; BULK SILICONS; FABRICATION PROCESSES; LARGE CURRENTS; OUTPUT CURRENTS; PLANARIZATION; SERIES RESISTANCES;

ASPECT RATIO; ETCHING; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); LOGIC GATES; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SILICON WAFERS;

EID: 55649102720     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2911512     Document Type: Conference Paper

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