Nanostructuring of epitaxial graphene layers on SiC by means of field-induced atomic force microscopy modification

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 3149-3152

  Rius, G ^a   Camara, N ^a   Godignon, P ^a   Perez Murano F ^a   Mestres, N ^b  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ELECTRICAL RESISTANCES; EPITAXIAL GRAPHENE; GRAPHENE LAYERS; GRAPHENES; NANO-METER SCALE; NANO-STRUCTURING; NANOELECTRONIC DEVICES; NANOPATTERNING; NEGATIVE POLARIZATION; SIC SUBSTRATES;

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; POLARIZATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GRAPHITE;

EID: 72849120585     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3250208     Document Type: Conference Paper

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