HBr based inductively coupled plasma etching of high aspect ratio nanoscale trenches in InP: Considerations for photonic applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 2351-2356

  Sultana, N ^a   Zhou, Wei ^a   Lafave Jr , Tim P ^a   MacFarlane, Duncan L ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO DEPENDENT ETCHINGS; DEVICE RELIABILITY; ETCHING MECHANISM; HIGH ASPECT RATIO; INP; INTEGRATED PHOTONICS; MICROLOADING EFFECT; NANO SCALE; PHOTONIC APPLICATION; PROCESSING TEMPERATURE; TEMPERATURE DEPENDENCE; TRENCH ETCHING;

ANISOTROPIC ETCHING; ASPECT RATIO; CHLORINE; INDUCTIVELY COUPLED PLASMA; NANOSTRUCTURED MATERIALS; PHOTORESISTS; PLASMA ETCHING; PRESSURE DROP; PROCESSING; SURFACE CHEMISTRY; SURFACE ROUGHNESS;

REACTIVE ION ETCHING;

EID: 72849111679     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3250263     Document Type: Conference Paper

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