Focused ion beam process for formation of a metal/insulator/metal double tunnel junction

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7151-7154

  Nakayama, Masayoshi ^a   Yanagisawa, Junichi ^a   Wakaya, Fujio ^a   Gamo, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Double layer resist; Double tunnel junction; Ferromagnetic metal; Focused ion beam (FIB); Nanofabrication; Nitrocellulose; Single electron tunneling (SET); Sputtering etching

Indexed keywords

ELECTRON TUNNELING; ETCHING; FERROMAGNETIC MATERIALS; ION BEAM LITHOGRAPHY; ION IMPLANTATION; MIM DEVICES; PHOTORESISTS; SEMICONDUCTOR DEVICE STRUCTURES; SPUTTERING; TUNNEL JUNCTIONS;

DOUBLE TUNNEL JUNCTIONS; FOCUSED ION BEAM (FIB) ETCHING; NITROCELLULOSE; SINGLE ELECTRON TUNNELING (SET);

NANOTECHNOLOGY;

EID: 0033343882     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7151     Document Type: Article

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