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Journal of the Electrochemical Society

Volumn 151, Issue 12, 2004, Pages

Etching characteristics of HBr-based chemistry on InP using the ICP technique

(2) Vicknesh, S a Ramam, A a

a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING CHARACTERISTICS; KINK EFFECT; SIDEWALL PROFILES; TEMPERATURE PARAMETERS;

BROMINE; ETCHING; HYDROGEN INORGANIC COMPOUNDS; INDUCTIVELY COUPLED PLASMA; PRESSURE EFFECTS; REACTIVE ION ETCHING; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 10844274797 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1812731 Document Type: Article

Times cited : (19)

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