Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum well

Journal of Applied Physics

Volumn 99, Issue 6, 2006, Pages

  Singh, S D ^a   Porwal, S ^a   Sharma, T K ^a   Rustagi, K C ^b  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRON TRANSITIONS; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

PHOTOLUMINESCENCE PEAK ENERGY; TEMPERATURE DEPENDENCE; ULTRATHIN QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33645683285     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2184431     Document Type: Article

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