Single-charge tunneling in uncoupled boron-doped silicon nanochains

Chemical Physics Letters

Volumn 484, Issue 4-6, 2010, Pages 258-260

  Ma, D D D ^a   Chan, K S ^a   Chen, D M ^b   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED SILICON; CHARGE TUNNELING; CHARGING ENERGIES; DE-TRAPPING; INDUCED CHARGES; LOCAL STATE; NANO-DEVICES; NANOCHAINS; SCANNING TUNNELING MICROSCOPY (STM); SCANNING TUNNELING SPECTROSCOPY;

BORON; ELECTRIC CIRCUIT BREAKERS; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; WIND TUNNELS;

CHARGE TRAPPING;

EID: 72649091566     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2009.11.047     Document Type: Article

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