Characterization and numerical simulations of high power field-plated pHEMTs

2008 European Microwave Integrated Circuit Conference, EuMIC 2008

Volumn , Issue , 2008, Pages 218-221

  Chini, A ^a   Esposto, M ^a   Verzellesi, G ^a   Lavanga, S ^b   Lanzieri, C ^b   Cetronio, A ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b SELEX SISTEMI INTEGRATI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BENEFICIAL EFFECTS; CONTINUOUS WAVE; DLTS; EXPERIMENTAL MEASUREMENTS; FABRICATED DEVICE; FIELD-PLATE STRUCTURES; GAAS; HIGH-POWER; NUMERICAL SIMULATION; POWER DENSITIES; RF DISPERSION; RF POWER PERFORMANCE; RF SIGNAL; TRAPPED CHARGE;

COMPUTER SIMULATION; MICROWAVE INTEGRATED CIRCUITS; PLATES (STRUCTURAL COMPONENTS);

MATHEMATICAL MODELS;

EID: 66649129363     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMICC.2008.4772268     Document Type: Conference Paper

References (5)

1. K. Asano, Y. Miyoshi, K. Ishikura, Y. Nashimoto, M. Kuzuhara and M.Minuta, "Novel high power AlGaAs/GaAs HFET with a fieldmodulating plate operated at 35V drain voltage", International Electron Devices Meeting (IEDM) 1998, 6-9 December, 1998, pp. 59-62.
2. A. Wakejima, K. Ota, and K. Matsunaga, "A GaAs-based fieldmodulating plate HFET with improved WCDMA peak-output-power characteristics", IEEE Transactions on Electron Devices, Vol. 50, No.9, 2003, pp. 1983-1987.
3. A. Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller and U. K. Mishra "12W/mm power density alGaN/GaN HEMTs on sapphire substrate", IEE Electronics Letters, Vol. 40, Issue 1, 2004, pp. 73-74.
4. G. Verzellesi, A. F. Basile, A. Cavallini, A. Castaldini, A. Chini and C.Canali, "Light Sensitività of Current DLTS and Its Implications on the Physics of DC-to-RF Dispersion in AlGaAs-GaAs HFETs", IEEE Transactions on Electron Devices, Vol. 52, No.4, 2005, pp. 594-602. (Pubitemid 40535887)
5. A. Chini, S. Lavanga, M. Peroni, C. Lanzieri, A. Cetronio, V. Teppati, V. Camarchia, G. Ghione and G. Verzellesi, "Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs", The 1st European Microwave Integrated Circuits Conference, 10-13 Sept. 2006.