Microwave-cut silicon layer transfer

Applied Physics Letters

Volumn 87, Issue 22, 2005, Pages 1-3

  Thompson, D C ^a   Alford, T L ^a   Mayer, J W ^a   Hochbauer, T ^b   Nastasi, M ^b   Lau, S S ^c   Theodore, N David ^d   Henttinen, K ^e   Suni, Llkka ^e   Chu, Paul K ^f  

^a Arizona State University   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d FREESCALE SEMICONDUCTOR INC   (United States)

^e VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

^f CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EXFOLIATION; INCUBATION; ION-CUT PROCESS; SILICON LAYERS;

ATOMIC FORCE MICROSCOPY; HALL EFFECT; ION EXCHANGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

MICROWAVE HEATING;

EID: 27944434830     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2135395     Document Type: Article

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