The electrical and interfacial properties of metal-high- k oxide-semiconductor field effect transistors with CeO2HfO2 laminated gate dielectrics

Applied Physics Letters

Volumn 91, Issue 20, 2007, Pages

  Chang, Ingram Yin Ku ^a   Chen, Chun Heng ^a   Chiu, Fu Chien ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM COMPOUNDS; ELECTRON MOBILITY; GATE DIELECTRICS; SEMICONDUCTOR DIODES;

INTERFACIAL PROPERTIES; SUBTHRESHOLD SLOPES; SURFACE RECOMBINATION VELOCITY;

MOSFET DEVICES;

EID: 36249001074     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2805218     Document Type: Article

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