Radioactive nuclei induced soft errors at ground level

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3437-3441

  Wrobel, Frederic ^a   Saigné, Frederic ^a   Gedion, Michael ^a   Gasiot, Jean ^a   Schrimpf, Ronald D ^b  

^a UNIV MONTPELLIER   (France)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

Alpha emitters; Hafnium; Platinum; Secular equilibrium; Soft error rate; Uranium

Indexed keywords

90NM NODE; ALPHA EMITTERS; FEATURE SIZES; GROUND LEVEL; PARTS PER TRILLION; RADIOACTIVE NUCLEI; SECULAR EQUILIBRIUM; SOFT ERROR; SOFT ERROR RATE; TECHNOLOGY NODES;

ALPHA PARTICLES; HAFNIUM; INTEGRATED CIRCUITS; ISOTOPES; MICROPROCESSOR CHIPS; MONTE CARLO METHODS; NANOTECHNOLOGY; PLATINUM; TRANSURANIUM ELEMENTS; URANIUM;

ERROR CORRECTION;

EID: 72349097609     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2033363     Document Type: Conference Paper

References (15)

1. E. Hodgson, E. Gadioli, and E. G. Erba, Introductory Nuclear Physics. Oxford, U.K.: Oxford Science Publications.
2. D. F. Heidel, K. P. Rodbell, E. H. Cannon, C. Cabral Jr., M. S. Gordon, P. Oldiges, and H. H. K. Tang, "Alpha-particle-induced upsets in advanced CMOS circuits and technology" IBM J. Res. Dev., vol. 52, no. O.3, pp. 225-232, May 2008.
3. F. Wrobel, J. Gasiot, F. Saigné, and A. D. Touboul, "Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories" Appl. Phys. Lett., vol. 93, p. 064105, 2008.
4. Handbook for Calculations of Nuclear Reaction Data Reference Input Parameter Library, 1998 [Online]. Available: http://www-nds.iaea.or.at/ripl/
5. F. Wrobel, J. Gasiot, and F. Saigné, "Hafnium and uranium contributions to soft error rate at ground level" IEEE, Trans. Nucl. Sci., vol. 55, pp. 3141-3145, Dec. 2008.
6. G. Audi and A. H. Wapstra, Nucl. Phys., vol. A595, p. 409, 1995.
7. [Online]. Available: http://www.srim.org/
8. V. Correas, F. Saigné, B. Sagnes, J. Boch, G. Gasiot, D. Giot, and P. Roche, "Simulation tool for the prediction of heavy ion cross section of innovative 130-nm SRAMs" IEEE Trans. Nucl. Sci., vol. 55, no. 4, pt. 1, pp. 2036-2041, Aug. 2008.
9. R. Baumann and E. Smith, Call for Improved Ultra-Low Background Alpha-Particle Emission Metrology for the Semiconductor Industry Int.SEMATECH Technology, 2001, Transfer #01054118A-XFR.
10. L. W. Connell, F. W. Sexton, and A. K. Prinja, "Further development of the heavy ion cross section for single event UPset: Model (HICUP)" IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 2026-2034, 1995.
11. P. Roche, G. Gasiot, K. Forbes, V. O'Sullivan, and V. Ferlet, "Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 30-nm technology node" IEEE Trans. Nucl. Sci., vol. 50, pp. 2046-2054, Dec. 2003.
12. T. Mérelle, H. Chabane, J.-M. Palau, K. Castellani-Coulié, F. Wrobel, F. Saigné, B. Sagnes, J. Boch, J. R. Vaille, G. Gasiot, P. Roche, M.-C. Palau, and T. Carrière, "Criterion for SEU occurrence in SRAM deduced from circuit and device simulations in case of neutron-induced SER" IEEE Trans. Nucl. Sci., vol. 52, pp. 1148-1155, 2005.
13. F. Wrobel and P. Iacconi, "Parameterization of neutron-induced SER in bulk SRAMs from reverse Monte Carlo simulations" IEEE Trans. Nucl. Sci., vol. 52, pp. 2313-1318, Dec. 2005.
14. E. D. Özben, J. M. J. Lopes, M. Roeckerath, S. Lenk, B. Holländer, Y. Jia, D. G. Schlom, J. Schubert, and S. Mantl, "SmScO3 thin films as an alternative gate dielectric" Appl. Phys. Lett., vol. 93, p. 052902, 2008.
15. [15] F. Wrobel, J.-M. Palau, M. C. Calvet, O. Bersillon, and H. Duarte, "Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure. Scaling effects on SEU and MBU cross sections" IEEE Trans. Nucl. Sci., vol. 48, pp. 1946-1951, Dec. 2001.