Effect of free radical activation for low temperature Si to Si wafer bonding

Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

  Byun, K Y ^a   Ferain, I ^a   Colinge, C ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING ENERGIES; DIRECT WAFER BONDING; HYDROPHILIC AND HYDROPHOBIC; IN-SITU; IN-VACUUM; LOW TEMPERATURE ANNEALING; LOW TEMPERATURES; NITROGEN RADICAL; PRE-TREATMENTS; REMOTE PLASMAS; SCANNING ACOUSTIC MICROSCOPES; SI WAFER; SURFACE MODIFICATION;

ACOUSTIC MICROSCOPES; ELECTRONICS PACKAGING; FREE RADICALS; HYDROPHILICITY; HYDROPHOBICITY; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SURFACE TREATMENT;

WAFER BONDING;

EID: 72249088200     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3258276     Document Type: Article

References (18)

1. Q.-Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology, p. 203, John Wiley & Sons, New York (1999).
2. S. Hayashi, D. Bruno, R. Sandhu, and M. S. Goorsky, J. Electron. Mater., 32, 877 (2003). 10.1007/s11664-003-0204-1
3. A. Sanz-Velasco, P. Amirfeiz, S. Bengtsson, and C. Colinge, J. Electrochem. Soc., 150, G155 (2003). 10.1149/1.1536182
4. S. Holl, C. Colinge, K. Hobart, and F. Kub, J. Electrochem. Soc., 153, G613 (2006). 10.1149/1.2196673 (Pubitemid 43838715)
5. T. Suni, K. Henttinen, I. Suni, and J. Makinen, J. Electrochem. Soc., 149, G348 (2002). 10.1149/1.1477209 (Pubitemid 34697454)
6. -4
7. X. Zhang and J. Raskin, J. Microelectromech. Syst., 14, 368 (2005). 10.1109/JMEMS.2004.839027
8. M. Wiegand, M. Reiche, and U. Gösele, J. Electrochem. Soc., 147, 2734 (2000). 10.1149/1.1393597 (Pubitemid 30908400)
9. S. N. Farrens, J. R. Dekker, J. K. Smith, and B. E. Roberds, J. Electrochem. Soc., 142, 3949 (1995). 10.1149/1.2048440
10. D. Pasquariello, C. Hedlund, and K. Hjort, J. Electrochem. Soc., 147, 2699 (2000). 10.1149/1.1393592 (Pubitemid 30908395)
11. T. Rogers and N. Aitken, ECS Trans., 16 (8), 507 (2008). 10.1149/1.2982905
12. N. Inagaki, S. Tasaka, H. Kawai, and Y. Yamada, J. Appl. Polym. Sci., 64, 831 (1997). 10.1002/(SICI)1097-4628(19970502)64:5<831::AID-APP2>3.0.CO;2- Q
13. Y. Kim and M. Boudart, Langmuir, 7, 2999 (1991). 10.1021/la00060a016
14. K. Byun, I. Ferain, and C. Colinge, in Proceedings of the TMS Electronic Materials Conference, The Minerals, Metals & Materials Society, p. 19 (2009).
15. F. Fournel, H. Moriceau, and R. Beneyton, ECS Trans., 3 (6), 139 (2006). 10.1149/1.2357063 (Pubitemid 46797057)
16. T. Martini, J. Steinkirchner, and U. Gösele, J. Electrochem. Soc., 144, 354 (1997). 10.1149/1.1837409
17. X. Ma, W. Liua, Z. Song, W. Li, and C. Lin, J. Vac. Sci. Technol. B, 25, 229 (2007). 10.1116/1.2406060 (Pubitemid 46512032)
18. C. Wang, E. Higurashi, and T. Suga, Jpn. J. Appl. Phys., 47, 2526 (2008). 10.1143/JJAP.47.2526