Low temperature void free hydrophilic or hydrophobic silicon direct bonding

ECS Transactions

Volumn 3, Issue 6, 2006, Pages 139-146

  Fournel, F ^a   Moriceau, H ^a   Beneyton, R ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIRECT BONDING; TEMPERATURE TREATMENT; TUNED ANNEALING PROCESS;

ANNEALING; HYDROPHILICITY; HYDROPHOBICITY; SURFACE TREATMENT; WAFER BONDING;

SILICON WAFERS;

EID: 34249063002     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2357063     Document Type: Conference Paper

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