Theory of a novel voltage-sustaining layer for power devices

Microelectronics Journal

Volumn 29, Issue 12, 1998, Pages 1005-1011

  Chen, X B ^a   Mawby, P A ^c   Board, K ^c   Salama, C A T ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF TORONTO   (Canada)

^c SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Breakdown voltage; Power devices; Specific on resistance; Voltage sustaining layers

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRIC NETWORK ANALYSIS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SEMICONDUCTOR DEVICE STRUCTURES;

COMPOSITE BUFFER LAYERS; SPECIFIC ON-RESISTANCE;

BUFFER CIRCUITS;

EID: 0032295957     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(98)00065-2     Document Type: Article

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