Si O2 interfacial layer as the origin of the breakdown of high- k dielectrics stacks

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 472-475

  Rafik, M ^a   Ribes, G ^a   Roy, D ^b   Ghibaudd, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION PROCESS; HIGH - K DIELECTRICS; INTERFACIAL LAYERS; METAL GATE STACKS; SUBSTRATE INJECTIONS; THICKNESS FLUCTUATIONS; THICKNESS VARIATIONS;

ELECTRIC LOAD MANAGEMENT;

EID: 59949102909     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3077185     Document Type: Article

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