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Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates

(7) Smith, A J a Gwilliam, R M a Stolojan, V a Knights, A P b Coleman, P G c Kallis, A c Yeong, S H d

a UNIVERSITY OF SURREY (United Kingdom)

b MCMASTER UNIVERSITY (Canada)

c University of Bath (United Kingdom)

d NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS/CRYSTALLINE INTERFACE; ANNEALING TEMPERATURES; BURIED OXIDES; CONCENTRATION OF; DEFECT CONCENTRATIONS; DIVACANCIES; ELECTRICAL ACTIVATION; EXCESS VACANCY; INTERSTITIAL CLUSTERS; INTERSTITIALS; MONTE CARLO SIMULATION; PHOSPHORUS DIFFUSION; POST-IMPLANTATION; POSTIMPLANTATION ANNEALING; SILICON-ON-INSULATOR SUBSTRATES; VACANCY-TYPE DEFECTS; VARIABLE-ENERGY POSITRON ANNIHILATION SPECTROSCOPIES;

ANNEALING; COMPUTER SIMULATION; CONCENTRATION (PROCESS); DEFECTS; ION BOMBARDMENT; ION IMPLANTATION; MICROSENSORS; MONTE CARLO METHODS; PHOSPHORUS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SIMULATED ANNEALING; SUBSTRATES; VACANCIES;

SILICON;

EID: 71749103053 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3262527 Document Type: Article

Times cited : (4)

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