Annealing behavior of low-energy ion-implanted phosphorus in silicon

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Ruffell, S ^a   Mitchell, I V ^a   Simpson, P J ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STRIPPING; CZOCHRALSKI (CZ) WAFERS; LOW-ENERGY IONS; TRANSIENT-ENHANCED DIFFUSION (TED);

ANNEALING; DIFFUSION; ION IMPLANTATION; OXIDATION; POSITIVE IONS; SECONDARY ION MASS SPECTROMETRY; SILICON; TEMPERATURE MEASUREMENT;

PHOSPHORUS;

EID: 21644461491     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929861     Document Type: Article

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