Properties of N-doped ZnO grown by DBD-PLD

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1238-1240

  Leem, Jae Hyeon ^a   Lee, Deuk Hee ^a   Lee, Sang Yeol ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

DBD; N doping; Photoluminescence; PLD; ZnO

Indexed keywords

ACCEPTOR-BOUND EXCITONS; DBD; DIELECTRIC BARRIER; HIGH RESOLUTION DETECTION; HIGH TEMPERATURE; INTERSTITIALS; LOW TEMPERATURE GROWTH; LOW TEMPERATURE PHOTOLUMINESCENCE; N-DOPED; N-DOPING; P-TYPE DOPING; SAPPHIRE SUBSTRATES; ZNO;

BINDING ENERGY; CORUNDUM; DEPOSITION; DIELECTRIC DEVICES; FILM GROWTH; METALLIC FILMS; OXYGEN; OXYGEN VACANCIES; PHOTOLUMINESCENCE; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 71649099585     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.07.202     Document Type: Article

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