Temperature-insensitive silicon carbide resonant micro-extensometers

TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Volumn , Issue , 2009, Pages 268-271

  Azevedo, R G ^a   Myers, D R ^a   Pisano, A P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Gage; Gauge; Resonant; Resonator; SiC; Silicon carbide; Strain; Temperature compensation

Indexed keywords

ANALYTICAL MODEL; DEVICE LAYERS; EPITAXIAL SILICON; GAUGE; MATERIAL SOFTENING; NEAR ROOM TEMPERATURE; POLYCRYSTALLINE SILICON CARBIDE; SINGLE CRYSTALLINE SILICON; STRAIN SENSING; STRAIN TEMPERATURE; TEMPERATURE SENSITIVITY; TEMPERATURE-INSENSITIVE; THERMAL EXPANSION COEFFICIENTS; TURNOVER TEMPERATURES;

ACTUATORS; DILATOMETERS; GAGES; MICROSYSTEMS; PIEZOELECTRIC TRANSDUCERS; POLYCRYSTALLINE MATERIALS; POLYSILICON; RESONATORS; SILICON CARBIDE; SOLID-STATE SENSORS; TEMPERATURE DISTRIBUTION; TENSILE STRAIN; THERMAL EXPANSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 71449103481     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2009.5285513     Document Type: Conference Paper

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