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Volumn 410, Issue , 1996, Pages 211-216
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Thermal expansion of β-SiC, GaP and InP
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Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
HIGH PRESSURE EFFECTS;
HIGH TEMPERATURE EFFECTS;
MATHEMATICAL MODELS;
RESIDUAL STRESSES;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON CARBIDE;
THERMAL EXPANSION;
GALLIUM PHOSPHIDE;
SEMICONDUCTING FILMS;
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EID: 0029712422
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (16)
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References (27)
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