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Volumn 404, Issue 21, 2009, Pages 4211-4215
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Molecular dynamics simulations of atomic assembly in the process of GaN film growth
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Author keywords
Epitaxial growth; GaN film; Molecular dynamics simulation
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Indexed keywords
BUCKINGHAM POTENTIAL;
DEPOSITED LAYER;
DIFFUSION COEFFICIENTS;
DYNAMIC FEATURES;
EQUILIBRIUM POSITIONS;
GAN FILM;
MEAN SQUARE DISPLACEMENT;
MOLECULAR DYNAMICS SIMULATION;
MOLECULAR DYNAMICS SIMULATIONS;
RADIAL DISTRIBUTION FUNCTIONS;
STABLE STATE;
TIME EVOLUTIONS;
TIME STEP;
WURTZITE GAN;
ATOMS;
DISTRIBUTION FUNCTIONS;
DYNAMICS;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
MOLECULAR DYNAMICS;
MOLECULAR MECHANICS;
SEMICONDUCTING GALLIUM;
SURFACE STRUCTURE;
ZINC SULFIDE;
FILM GROWTH;
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EID: 71149115885
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2009.07.193 Document Type: Article |
Times cited : (13)
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References (23)
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