Atomistic model of limited-thickness Si(001) epitaxy at low temperatures

Journal of Applied Physics

Volumn 95, Issue 2, 2004, Pages 446-453

  Shintani, K ^a   Nakajima, T ^a   Kameoka, S ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; DIMERS; LOW TEMPERATURE EFFECTS; MOLECULAR DYNAMICS; MONOLAYERS; MONTE CARLO METHODS; SUBSTRATES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL STRUCTURES; HOMOEPITAXY;

EPITAXIAL GROWTH;

EID: 0742267113     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632012     Document Type: Article

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