The influences of thickness of spacing layer and the elastic anisotropy on the strain fields and band edges of InAs/GaAs conical shaped quantum dots

Chinese Physics B

Volumn 18, Issue 1, 2009, Pages 16-22

  Liu, Yu Min ^a   Yu, Zhong Yuan ^a   Ren, Xiao Min ^a  

^a NONE

Author keywords

Electronic structure; Quantum dot; Strain

Indexed keywords

ANISOTROPY; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES;

BAND EDGES; CONTINUUM ELASTIC THEORIES; ELASTIC ANISOTROPIES; ELASTIC CHARACTERISTICS; FINITE-ELEMENT ANALYSIS; INAS/GAAS; QUANTUM DOT; REALISTIC MATERIALS; STRAIN FIELDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 62649155763     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/1/003     Document Type: Article

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