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Volumn , Issue , 2009, Pages 1109-1112

Advanced heterogeneous integration of InP HBT and CMOS Si technologies for high performance mixed signal applications

Author keywords

Analog digital conversion; CMOSFETs; Heterogeneous integration; Heterojunction bipolar transistors

Indexed keywords

ANALOG-DIGITAL CONVERSION; CMOS WAFERS; CMOSFETS; COMPOUND SEMICONDUCTORS; DARPA PROGRAM; DYNAMIC RANGE; HETEROGENEOUS INTEGRATION; II-IV SEMICONDUCTORS; INP-HBT; MIXED SIGNAL APPLICATIONS; NORTHROP GRUMMAN SPACE TECHNOLOGIES; SCALE INTEGRATION; SI TECHNOLOGY;

EID: 70549098752     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2009.5165895     Document Type: Conference Paper
Times cited : (16)

References (8)
  • 4
    • 57649104815 scopus 로고    scopus 로고
    • C. Monier, A. Cavus, R.S. Sandhu, A. Oshiro, D. Li, D. Matheson, B. Chan, and A. Gutierrez-Aitken, Low Power High-Speed Circuits with InAs-based HBT Technology, Presented at the 2006 Imitational Conference on Compound Semiconductor Manufacturing Technology, April 24-27, 2006, Vancouver, Canada.
    • C. Monier, A. Cavus, R.S. Sandhu, A. Oshiro, D. Li, D. Matheson, B. Chan, and A. Gutierrez-Aitken, "Low Power High-Speed Circuits with InAs-based HBT Technology," Presented at the 2006 Imitational Conference on Compound Semiconductor Manufacturing Technology, April 24-27, 2006, Vancouver, Canada.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.