Sub-micrometer InP/InGaAs heterojunction bipolar transistors with f T = 400 GHz and fmax > 500 GHz

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2006, Issue , 2006, Pages 100-103

  Scott, D W ^a   Chang, P C ^a   Sawdai, D ^a   Dang, L ^a   Wang, J ^a   Barsky, M ^a   Phan, W ^a   Chan, B ^a   Oyama, B ^a   Gutierrez Aitken, A ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DDS CIRCUITS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); MIXED-SIGNAL APPLICATIONS;

EMITTER COUPLED LOGIC CIRCUITS; INTERFACES (MATERIALS); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33847118913     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. J. Zolper, "Challenges and opportunities for InP HBT mixed signal circuit technology," Proceedings of the Indium Phosphide and Related Materials Conference, 2003, pp. 8-11.
2. max ≥ 450GHz," IEEE Electron Dev Lett, 2005, vol. 26, pp. 530-2.
3. t and >400GHz fmax," IEDM Tech. Dig., 2004, pp. 553-6.
4. max >500 GHz," Proceedings of the Indium Phosphide and Related Materials Conference, 2005, pp. 335-8.
5. X. Zeng, et al., "An innovative planarization technology for ultra high frequency InP/InGaAs heterojunction bipolar transistor (HBT) manufacturing," State-of-the-Art Program on Compound Semiconductors, Proceedings of the International Symposia, 2004, pp. 44-50.