Low power high-speed circuits with inAs-based HBT technology

2006 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2006, Pages 235-238

  Monier, C ^a   Cavus, A ^a   Sandhu, R S ^a   Oshiro, A ^a   Li, D ^a   Kaneshiro, E ^a   Matheson, D ^a   Chan, B ^a   Gutierrez Aitken, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

HBT; High indium composition; InP; Low power circuits; Metamorphic; Thermal resistance

Indexed keywords

BASE-COLLECTOR JUNCTIONS; COMPOSITIONALLY GRADED BUFFERS; DC AND RF CHARACTERISTICS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH INDIUM CONTENTS; INP; LOW-POWER CIRCUIT; METAMORPHIC;

EQUIVALENT CIRCUITS; HEAT RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTOR DEVICE MANUFACTURE;

LOW POWER ELECTRONICS;

EID: 57649104815     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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