Reduction of operation voltage in GaN-based light-emitting diode utilizing a Si δ-doped n-GaN contact layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 7 A, 2002, Pages

  Jeon, Seong Ran ^a   Cho, Myong Soo ^a   Hung, Tran Vinh ^a   Yu, Min A ^a   Yang, Gye Mo ^a  

^a Chonbuk National University   (South Korea)

Author keywords

GaN; Leakage current; LEDs; Operation voltage; Si doping; Threading dislocation

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GALLIUM NITRIDE; LEAKAGE CURRENTS; LIGHT EMISSION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

OPERATION VOLTAGE;

LIGHT EMITTING DIODES;

EID: 0036650885     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l761     Document Type: Article

References (13)