An aluminum-germanium eutectic structure for silicon wafer bonding technology

Physica Status Solidi C: Conferences

Volumn 2, Issue 10, 2005, Pages 3706-3709

  Perez Quintana, I ^a,c   Ottaviani, G ^a   Tonini, R ^a   Felisari, L ^a   Garavaglia, M ^b   Oggioni, L ^b   Morin, D ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c UNIVERSITY OF HAVANA   (Cuba)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; METALLURGY; PRESSURE EFFECTS; SILICON WAFERS;

EUTECTIC BONDING; GERMANIUM FILMS; RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS); SILICON WAFER BONDING TECHNOLOGY;

ALUMINUM COMPOUNDS;

EID: 27344446502     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461755     Document Type: Conference Paper

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