A molecular dynamics study of H radical bombardment of CH3 : SSi(1 0 0) - Comparison of simulation and experiment

Journal of Physics D: Applied Physics

Volumn 42, Issue 22, 2009, Pages

  Végh, Joseph J ^a,b   Graves, David B ^a  

^a University of California   (United States)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY FUNCTIONS; ETCH MECHANISM; ETCH PRODUCTS; EXPERIMENTAL OBSERVATION; MOLECULAR DYNAMICS SIMULATIONS; NO FORMATION; PLASMA-SURFACE INTERACTIONS; PRODUCT DISTRIBUTIONS; REACTIVE EMPIRICAL BOND ORDER POTENTIAL; SI(1 0 0); THERMAL PROCESS;

FLUORINE CONTAINING POLYMERS; MOLECULAR DYNAMICS; PLASMA INTERACTIONS;

SILICON;

EID: 70450213273     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/22/222001     Document Type: Article

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