PLD amorphous In-Ga-Zn-O TFTs for future optoelectronics

Digest of Technical Papers - SID International Symposium

Volumn , Issue , 2008, Pages 117-123

  Fung, Tze Ching ^a   Nomura, Kenji ^b   Hosono, Hideo ^b   Kanicki, Jerzy ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

a IGZO; Active matrix flat panel displays (AM FPDs); Oxide semiconductor; Thin film transistors (TFTs)

Indexed keywords

A-IGZO; ACTIVE MATRIXES; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; OXIDE SEMICONDUCTOR; ROOM TEMPERATURE; SUBTHRESHOLD SWING; VISIBLE LIGHT;

AMORPHOUS FILMS; ELECTRIC PROPERTIES; FLAT PANEL DISPLAYS; PHOTONS; THIN FILMS; ZINC;

THIN FILM TRANSISTORS;

EID: 67349239435     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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