High-resolution transmission-electron-microscopy study of ultrathin Al-induced crystallization of amorphous Si

Journal of Materials Research

Volumn 24, Issue 11, 2009, Pages 3294-3299

  Wang, Zumin ^a   Jeurgens, Lars P H ^a   Wang, Jiang Y ^a   Phillipp, Fritz ^a   Mittemeijer, Eric J ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; AUGER ELECTRON; BOTTOM LAYERS; CRYSTALLINE SI; HIGH RESOLUTION; HIGH-PURITY; INDUCED CRYSTALLIZATION; OVERLAYERS; SI LAYER; ULTRA-THIN;

ALUMINUM; AMORPHOUS SILICON; AUGER ELECTRON SPECTROSCOPY; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DEPTH PROFILING; MICROCRYSTALLINE SILICON; SILICON;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 70450165324     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0404     Document Type: Article

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