Radiative defect state identification in semi-insulating GaAs using photo-carrier Radiometry

Semiconductor Science and Technology

Volumn 24, Issue 12, 2009, Pages

  Xia, Jun ^a   Mandelis, Andreas ^a  

^a DEPARTMENT OF MECHANICAL AND INDUSTRIAL ENGINEERING   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; IMAGE PROCESSING; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; TEMPERATURE DISTRIBUTION;

CARRIER DIFFUSIONS; DETECTION AND IDENTIFICATIONS; FREE CARRIER RECOMBINATION; PHOTO-CARRIER RADIOMETRIES; PHOTOLUMINESCENCE QUANTUM EFFICIENCY; SEMI-INSULATING GAAS; TEMPERATURE DEPENDENCE; TEMPERATURE SPECTRA;

RADIOMETRY;

EID: 70449945471     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/12/125002     Document Type: Article

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