Broadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Xia, Jun ^a   Mandelis, Andreas ^a  

^a DEPARTMENT OF MECHANICAL AND INDUSTRIAL ENGINEERING   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER EMISSION; DEEP LEVEL; DEFECT CONFIGURATIONS; DEFECT STATE; DIFFERENT MODES; EMISSION PROCESS; ERGODIC; ERGODICITY; EXPERIMENTAL DATA; LOW TEMPERATURE REGIONS; OPTO-ELECTRONIC PROCESS; PHOTOTHERMAL SPECTROSCOPIES; RANDOM ENERGY; SEMI-INSULATING GAAS; SI-GAAS; STRETCHED EXPONENTIAL; TIME DOMAIN;

ACTIVATION ENERGY; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; LASER SPECTROSCOPY; SEMICONDUCTING GALLIUM;

DEFECTS;

EID: 66649117480     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3131673     Document Type: Article

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