Thermoluminescence in GaAs

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn 2000-January, Issue , 2000, Pages 141-144

  Dao, L V ^a   Kraft, E ^a   Gal, M ^a   Fu, L ^b   Jagadish, C ^b  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Annealing; Charge carrier processes; Gallium arsenide; Insulation; Luminescence; Photoluminescence; Photonic band gap; Physics; Temperature dependence; Temperature distribution

Indexed keywords

ANNEALING; ENERGY GAP; INSULATING MATERIALS; INSULATION; ION IMPLANTATION; LUMINESCENCE; PHOTOLUMINESCENCE; PHOTONIC BAND GAP; PHYSICS; SEMICONDUCTING GALLIUM; TEMPERATURE DISTRIBUTION; THERMOLUMINESCENCE;

CHARGE CARRIER PROCESS; INCREASING TEMPERATURES; LUMINESCENCE INTENSITY; MODEL CALCULATIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMAL EXCITATION; THERMALLY STIMULATED LUMINESCENCE;

GALLIUM ARSENIDE;

EID: 84950124213     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SIM.2000.939215     Document Type: Conference Paper

References (5)

1. See for example J. I. Pankove, Optical processes in semiconductors, Dover Publ. New York (1975)
2. See for example, G. D. Gilliland, Mat. Sci. and Eng. R-reports 18, 99 (1997)
3. S. W. S. McKeever, Thermoluminescence of Solids, Cambridge University Press, Cambridge (1985)
4. J. D. Lambkin, L. Considine, S. Walsh, G. M. O'Connor, C. J. McDonagh, and T. J. Glynn, Appl. Phys. Lett. 65, 73, (1994).
5. R. M. Cohen, Mat. Sci. and Eng. R-reports 20, 167 (1997).