Deep level photothermal spectroscopy: Physical principles and applications to semi-insulating GaAs band-gap multiple trap states

Journal of Applied Physics

Volumn 103, Issue 4, 2008, Pages

  Mandelis, Andreas ^a   Xia, Jun ^a  

^a DEPARTMENT OF MECHANICAL AND INDUSTRIAL ENGINEERING   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY GAP; INSULATING MATERIALS; LASER BEAMS;

PHOTOINDUCED TRANSIENT SPECTROSCOPY; QUANTITATIVE PHOTOTHERMAL SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 40149089092     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2842401     Document Type: Article

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