High-resolution photoinduced transient spectroscopy as a new tool for quality assessment of semi-insulating GaAs

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 398-402

  Kaminski, P ^a   Kozlowski, R ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

Electrical measurements; Electron states; Gallium arsenide

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; POINT DEFECTS; SPECTROSCOPIC ANALYSIS;

BULK CRYSTALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 10244261393     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01030-3     Document Type: Conference Paper

References (20)