Aligned AlN nanowires by self-organized vapor-solid growth

Nanotechnology

Volumn 20, Issue 49, 2009, Pages

  Yazdi, G R ^a,c   Persson, P O A ^a   Gogova, D ^b   Fornari, R ^b   Hultman, L ^a   Syvajarvi M ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c SHAHROOD UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

ALN NANOWIRE; ALN SINGLE CRYSTALS; CHANGE IN THICKNESS; CRITICAL LENGTH; CRITICAL VALUE; DISLOCATION FREE; GROWTH MECHANISMS; GROWTH MODES; NITROGEN PRESSURE; PREFERENTIAL GROWTH; SELF-ORGANIZED; SIC SUBSTRATES; SUBLIMATION EPITAXY; VAPOR-SOLID GROWTH; VAPOR-SOLID GROWTH MECHANISM; WURTZITE CRYSTAL STRUCTURE; WURTZITE STRUCTURE;

ASPECT RATIO; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRIC WIRE; NANOWIRES; NITROGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; SOIL CONSERVATION; SUBSTRATES; VAPORS; ZINC SULFIDE;

CRYSTAL STRUCTURE;

ALUMINUM NITRIDE NANOWIRE; NANOWIRE; NITROGEN; SILICON CARBIDE; UNCLASSIFIED DRUG;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; FIELD EMISSION; GROWTH CURVE; PHASE TRANSITION; POLARIZATION; PRIORITY JOURNAL; SOLID; SYNTHESIS; THICKNESS; VAPOR; VAPOR PRESSURE; VAPORIZATION;

EID: 70449869834     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/49/495304     Document Type: Article

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