Controlled growth of nanostructured III-nitride films via a reactive magnetron sputtering method

Journal of Crystal Growth

Volumn 306, Issue 2, 2007, Pages 288-291

  Liu, Q L ^a   Bando, Y ^b   Hu, J Q ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

A1. Nanostructure; A3. Physical vapor deposition processes; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ADATOMS; MAGNETRON SPUTTERING; NANORODS; NANOSTRUCTURED MATERIALS; NITRIDES; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS;

APICAL TIP RADIUS; CRYSTALLOGRAPHIC PLANES; SEMICONDUCTING III-V MATERIALS; SPUTTERING GAS;

FILM GROWTH;

EID: 34547693304     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.030     Document Type: Article

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