Low threshold voltage and carrier injection properties of inverted organic light-emitting diodes with [Ca24Al28O64] 4+(4e-) Cathode and Cu2-xSe anode

Journal of Physical Chemistry C

Volumn 113, Issue 42, 2009, Pages 18379-18384

  Yanagi, Hiroshi ^a,b   Kim, Ki Beom ^a   Koizumi, Ikue ^a   Kikuchi, Maiko ^a   Hiramatsu, Hidenori ^a   Miyakawa, Masashi ^a   Kamiya, Toshio ^a   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM CATHODE; CARRIER INJECTION PROPERTIES; DEGENERATED SEMICONDUCTORS; ELECTRIDES; ELECTRODE MATERIAL; LOW THRESHOLD VOLTAGE; LOW WORK FUNCTION; LUMINANCE EFFICIENCY; P-TYPE; ROOM TEMPERATURE; TOP ANODE; TOP-EMISSION;

ALUMINUM; ANODES; BUFFER LAYERS; CALCIUM; CATHODES; CURRENT DENSITY; EPITAXIAL LAYERS; LIGHT EMISSION; LIGHT EMITTING DIODES; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DIODES; THRESHOLD VOLTAGE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70449569127     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp906386q     Document Type: Article

References (30)

1. Hung, L. S.; Chen, C. H. Mater. Sci. Eng. 2002, R 39, 143.
2. Matsushima, T.; Goushi, K.; Adachi, C. Chem, Phys. Lett. 2007, 435, 327.
3. Ishii, H.; Sugiyama, K.; Ito, E.; Seki, K. Adv. Mater. 1999, 11, 605.
4. Seki, K.; Ishii, H. J. Electron Spectrosc. Relat. Phenom. 1998, 88-91, 821.
5. Dye, J. L. Science 2003, 301, 607.
6. Matsuishi, S.; Toda, Y.; Miyakawa, M.; Hayashi, K.; Kamiya, T.; Hirano, M.; Tanaka, I.; Hosono, H. Science 2003, 301, 626.
7. Toda, Y.; Yanagi, H.; Ikenaga, E.; Kim, J. J.; Kobata, M.; Ueda, S.; Kamiya, T.; Hirano, M.; Kobayashi, K.; Hosono, H. Adv. Mater. 2007, 19, 3564.
8. Kim, K. B.; Kikuchi, M.; Miyakawa, M.; Yanagi, H.; Kamiya, T.; Hirano, M.; Hosono, H. J. Phys. Chem, C 2007, 111, 8403.
9. Miyakawa, M.; Kamiya, T.; Hirano, M.; Hosono, H. Appl. Phys. Lett. 2007, 90, 182105.
10. Chen, C. W.; Lin, C. L.; Wu, C. C. Appl. Phys. Lett. 2004, 85, 2469.
11. Bulovic, V.; Tian, P.; Burrows, P. E.; Gokhale, M. R.; Forrest, S. R.; Thompson, M. E. Appl, Phys. Lett. 1997, 70, 2954.
12. Dobbertin, T.; Kroeger, M.; Heithecker, D.; Schneider, D.; Metzdorf, D.; Neuner, H.; Becker, E.; Johannes, H.-H.; Kowalsky, W. Appl. Phys. Lett. 2003, 82, 2.
13. Chu, T. Y.; Chen, J. F.; Chen, S. Y.; Chen, C. J.; Chen, C. H. Appl. Phys. Lett. 2006, 89, 053503.
14. Vaufrey, D.; Khalifa, M. B.; Tardy, J.; Ghica, C.; Blanchin, M. G.; Sandu, C.; Roger, J. A. Semicond. Sci. Technol. 2003, 78, 4.
15. Lee, K. H.; Jang, H. W.; Kim, K. B.; Tak, Y. H.; Lee, J. L. J. Appl. Phys. 2004, 95, 586.
16. Kim, S. Y.; Lee, J. L.; Kim, K. B.; Tak, Y. H. J. Appl. Phys. 2004, 95, 2560.
17. Hiramatsu, H.; Koizumi, I.; Kim, K. B.; Yanagi, H.; Kamiya, T.; Hirano, M.; Matsunami, N.; Hosono, H. J. Appl. Phys. 2008, 104-113723.
18. Chkoda, L.; Heske, C.; Sokolowski, M.; Umbach, E.; Steuber, F.; Staudigel, J.; Stößel, M.; Simmerer, J. Synth. Met. 2000, 111-112, 315.
19. Nuesch, F.; Rothberg, L. J.; Forsythe, E. W.; Le, Q. T.; Gao, Y. Appl. Phys. Lett. 1999, 74, 880.
20. Park, Y.; Choong, V.; Gao, Y.; Hsieh, B. R.; Tang, C. W. Appl. Phys. Lett. 1996, 68. 2699.
21. Padam, G. K. Thin Solid Film, 1987, 750, L89.
22. Hill, I. G.; Kahn, A.; Soos, Z. G.; Pascal, R. A., Jr. Chem. Phys. Lett. 2000, 327, 181.
23. Yokoyama, T.; Yoshimura, D.; Ito, E.; Ishii, H.; Ouchi, Y.; Seki, K. Jpn. J. Appl. Phys. 2003, 42, 3666.
24. - thin films. The vacuum annealing temperature was decreased from 500 to 300 °C.
25. Berleb, S.; Bruiting, W. Phys., Rev., Lett. 2002, 89, 286601.
26. Lee, S. T.; Wang, Y. M.; Hou, X. Y.; Tang, C. W. Appl., Phys. Lett. 1999, 74, 670.
27. Hill, I. G.; Kahn, A. J. Appl. Phys. 1999, 86, 2116.
28. 2-xSe and LaCuOSe:Mg should have common mechanisms for the small threshold voltages.
29. Yanagi, H.; Kikuchi, M.; Kim, K. B.; Hiramatsu, H.; Kamiya, T.; Hirano, M.; Hosono, H. Org. Electron. 2008, 9, 890.
30. Yamamoto, H.; Kasajima, H.; Yokoyama, W.; Sasabe, H.; Adachi, C. Appl. Phys. Lett. 2005, 86, 083502.