In situ study of nitrobenzene grafting on Si(1 1 1)-H surfaces by infrared spectroscopic ellipsometry

Electrochemistry Communications

Volumn 11, Issue 12, 2009, Pages 2316-2319

  Rappich, J ^a   Hinrichs, K ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

Author keywords

Electrochemistry; In situ monitoring; Infrared reflection spectroscopy; Silicon surface; Ultra thin organic film

Indexed keywords

ANTI-SYMMETRIC; AQUEOUS SOLUTIONS; ELECTROCHEMICAL PROCESSING; GRAFTING PROCESS; IN SITU MONITORING; IN-SITU STUDY; INERT ATMOSPHERES; INFRARED REFLECTION SPECTROSCOPY; INFRARED SPECTROSCOPIC ELLIPSOMETRY; IR ABSORPTION; OXIDE FORMATION; S-POLARIZED; SI (1 1 1); SI SURFACES; SILICON SURFACE; STRETCHING VIBRATIONS; SULPHURIC ACIDS; TETRAFLUOROBORATES; ULTRA THIN ORGANIC FILM;

ELECTROCHEMISTRY; ELECTROMAGNETIC WAVE REFLECTION; GRAFTING (CHEMICAL); NITROBENZENE; SILICON; SPECTROSCOPIC ELLIPSOMETRY; STRETCHING; SULFURIC ACID;

INFRARED SPECTROSCOPY;

EID: 70449521468     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2009.10.014     Document Type: Article

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