n-channel AlSb/GaSb modulation-doped field-effect transistors

Solid-State Electronics

Volumn 41, Issue 12, 1997, Pages 1853-1856

  Li, X ^a   Du, Q ^a   Heroux J B ^a   Wang, W I ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

ELECTRON SATURATION VELOCITY; MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0031367225     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00134-2     Document Type: Article

References (15)

1. Luo, L. F., Longenbach, K. F. and Wang. W. I., IEEE Electron Dev. Lett., 1990, 11(12), 567.
2. Luo, L. F., Beresford, R. and Wang, W. I., Appl. Phys. Lett., 1989, 55, 789.
3. You, K., Moriuchi, T. and Inoue, M., Jpn. Appl. Phys., 1990, 29(12), L-2445.
4. Li, X., Longenbach, K. F., Wang, Y. and Wang, W. I., IEEE Electron Dev. Lett., 1992, 13(4), 192.
5. Bolognesi, C. R., Werking, J. D., Caine, E. J., Kroemer, H. and Hu, E. L., IEEE Electron Dev. Lett., 1993, 14(13).
6. Longenbach, K. F., Beresford, R. and Wang, W. I., IEEE Trans. Electron Dev., 1990, 37(10), 2265.
7. You, K., Taniguchi, H., Kiyomi, K. and Inoue, M., Jpn J. Appl. Phys., 1991, 30(12B), 3833.
8. Data in Science and Technology: Semiconductors-Group IV Elements and III-V Compounds, Vol. 1, ed. O. Madelung, Springer-Verlag, 1991, p. 258.
9. Stern, F. and Howard, W. E., Phys. Rev., 1967, 163(3), 816.
10. Heinz, C. H., Int. J. Electronics, 1983, 54(2), 247.
11. Jimenez, J. L., Li, X. and Wang, W. I., Appl. Phys. Lett., 1994, 64, 2127.
12. Shur, M., GaAs Devices and Circuits, Plenum Press, New York, 1987 (ISBN 0-306-42192-5), p. 309.
13. Störmer, H. L., Baldwin, K., Gossard, A. C. and Wiegmann, W., Appl. Phys. Lett., 1984, 44, 1062.
14. Tiwari, S. and Wang, W. I., IEEE Electron Dev. Lett., 1984, 5(8), 333.
15. Kiehl, R. A., Yates, J., Palmateer, L. F., Wright, S. L., Frank, D. J., Jackson, T. N., Degelormo, J. F. and Fleischman, A. J., in Tech. Digest 13th IEEE GaAs IC Symp., Monterey, CA, 1991, pp. 101.