InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor

Electronics Letters

Volumn 39, Issue 22, 2003, Pages 1611-1612

  Tsai, Jung Hui ^a   Zhu, King Poul ^a   Chu, Ying Cheng ^a   Chiu, Shao Yen ^a  

^a NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CAMEL-LIKE GATE STRUCTURE;

FIELD EFFECT TRANSISTORS;

EID: 0242721378     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031016     Document Type: Article

References (6)

1. KANAN, R., HOCHET, B., and DECLERCQ, M.: 'Pseudo-complementary FET logic (PCFL): a low-power logic family in GaAs', IEEE J. Solid-State Circuits, 1996, 31, pp. 992-1000
2. 3SFET', IEEE Electron. Device Lett., 1988, 9, pp. 309-311
3. HARA, N., et al.: '0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency', IEEE Electron. Device Lett., 1997, 18, pp. 63-65
4. KIM, H.J., et al.: 'Optical responses of InGaP/GaAs/InGaAs p-channel double heterojunction pseudomorphic MODFET', Electron. Lett., 1998, 34, pp. 126-128
5. +)-GaInP/n-GaAs heterojunction camel-gate FET', Electron. Lett., 1998, 34, pp. 814-815
6. 0.51P/GaAs double-barrier bipolar transistor', IEEE Electron. Device Lett., 1992, 8, pp. 418-420