Effects of oxygen partial pressure on film growth and electrical properties of undoped ZnO films with thickness below 100 nm

Surface and Coatings Technology

Volumn 201, Issue 7 SPEC. ISS., 2006, Pages 4000-4003

  Kishimoto, S ^a   Yamada, T ^a   Ikeda, K ^a   Makino, H ^a   Yamamoto, T ^a  

^a KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Electrical property; Electron beam; Thin film; Undoped zinc oxide; Zinc oxide

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; FILM GROWTH; GRAIN SIZE AND SHAPE; HALL EFFECT; OXYGEN; PARTIAL PRESSURE; THIN FILMS;

BOUNDARY SCATTERING MECHANISM; HALL MOBILITY; PLASMA-ASSISTED ELECTRON-BEAM DEPOSITION; WILLIAMSON-HALL ANALYSIS;

ZINC OXIDE;

CARRIER CONCENTRATION; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; FILM GROWTH; GRAIN SIZE AND SHAPE; HALL EFFECT; OXYGEN; PARTIAL PRESSURE; THIN FILMS; ZINC OXIDE;

EID: 33751203564     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2006.08.009     Document Type: Article

References (3)

1. Kishimoto S., Yamamoto T., Nakagawa Y., Ikeda K., Makino H., and Yamada T. Superlattices Microstruct. 39 (2006) 306
2. Williamson G.K., and Hall W.H. Acta Metall. 1 (1953) 22
3. Kisi E., and Elcombe M.M. Acta Crystallogr., C Cryst. Struct. Commun. 45 (1989) 1867