Statistical retention modeling in floating-gate cell: ONO scaling

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 887-890

  Serov, Andrey ^a   Dongwan, Shin ^a   Dae, Sin Kim ^a   Taikyung, Kim ^a   Lee, Keun Ho ^a   Park, Young Kwan ^a   Yoo, Moon Hyun ^a   Taehun, Kim ^a   Sung, Sug Kang ^a   Lee, Choong Ho ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Dielectrics; Flash memories; Retention modeling

Indexed keywords

CELL STRUCTURE; DIELECTRICS; EXPERIMENTAL DATA; FLOATING-GATES; GATE STACKS; MONTE CARLO; RETENTION MODELING; SCALING TRENDS; SIMULATION STUDIES; STATISTICAL ANALYSIS; TIME-DEPENDENT; TRAP PARAMETERS; TUNNELING PATHS;

FLASH MEMORY;

WIND TUNNELS;

EID: 70449122059     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173372     Document Type: Conference Paper

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