Quantum chemical molecular dynamics analysis of the effect of oxygen vacancies and strain on dielectric characteristic of HfO2-x films

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 150-153

  Ito, Y ^a   Suzuki, K ^a   Mura, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Band gap; HfO2 film; Lattice defect; Molecular dynamics; Reliability

Indexed keywords

ENERGY GAP; OXYGEN VACANCIES; QUANTUM CHEMISTRY; SEMICONDUCTOR DEVICES;

HAFNIUM OXIDE; OXYGEN ATOMS;

DIELECTRIC MATERIALS;

EID: 42549085286     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282860     Document Type: Conference Paper

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