Tight-binding molecular dynamics simulation of desorbed SiO molecule during the oxidation of Si(111) surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2434-2437

  Yamada, Aruba ^a   Endou, Akira ^a   Takaba, Hiromitsu ^a   Teraishi, Kazuo ^a   Salai Cheettu Ammal, S ^a   Kubo, Momoji ^a   Nakamura, Kazutaka G ^b   Kitajima, Masahiro ^b   Miyamoto, Akira ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Desorption; Oxidation; Rovibrational state; SiO; Tight binding molecular dynamics

Indexed keywords

EID: 0000246283     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2434     Document Type: Article

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