Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 713-714

  Miura, Hideo ^a   Suzuki, Ken ^a   Ikoma, Toru ^a   Samukawa, Seiji ^a   Yoshikawa, Hideki ^b   Ueda, Shigenori ^b   Yamashita, Yoshiyuki ^b   Kobayashi, Keisuke ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Band gap; Hafnium oxide; High k gate dielectrics; Point defects; Quantum chemical molecular dynamics; Residual stress; Synchrotron radiation photoemission spectroscopy

Indexed keywords

CARBON FILMS; CHEMICAL PROPERTIES; DEFECTS; DEGRADATION; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DYNAMICS; ELECTROMAGNETIC WAVES; EMISSION SPECTROSCOPY; ENERGY GAP; FORMING; GATES (TRANSISTOR); HAFNIUM; MOLECULAR DYNAMICS; OXYGEN; OXYGEN VACANCIES; POINT DEFECTS; QUANTUM CHEMISTRY; RELIABILITY; RESIDUAL STRESSES; STRENGTH OF MATERIALS; SYNCHROTRON RADIATION; THICK FILMS; TUNGSTEN;

BAND GAP; HAFNIUM OXIDE; HIGH-K GATE DIELECTRICS; QUANTUM CHEMICAL MOLECULAR DYNAMICS; RESIDUAL STRESS; SYNCHROTRON-RADIATION PHOTOEMISSION SPECTROSCOPY;

GATE DIELECTRICS;

EID: 51549102625     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4559002     Document Type: Conference Paper

References (3)

1. H. Miura and S. lkeda, "Mechanical Stress Simulation for Highly Reliable Deep-Submicron Devices," IEICE Transactions on Electronics, Vol.E82-C, 1999, pp. 830-838.
2. 2-x films," in Proceedings of the 2006 Int. Conf. on Simulation of Semiconductor Processes and Devices, 2006, pp. 150-153.
3. 2, "in Proceedings of the 2006 Int. Conf. on Simulation of Semiconductor Processes and Devices, 2007, pp. 165-168.