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Volumn 256, Issue 2, 2009, Pages 489-494
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XPS study of annealing induced effects on surface and interface electronic properties of Si/Ge nanostructures
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Author keywords
Annealing; Interdiffusion; Interface; Multilayers; XPS
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Indexed keywords
ANNEALING;
DEPTH PROFILING;
ELECTRONIC PROPERTIES;
INTERDIFFUSION (SOLIDS);
INTERFACES (MATERIALS);
MULTILAYERS;
SURFACE TREATMENT;
ULTRAHIGH VACUUM;
VACUUM EVAPORATION;
ELECTRON BEAM EVAPORATION;
INTEGRATED INTENSITIES;
INTENSITY PATTERNS;
PEAK INTENSITY;
SI/GE MULTILAYER;
SUBSTANTIAL REDUCTION;
SURFACE AND INTERFACES;
SURFACE/INTERFACE;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 70449090029
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2009.07.054 Document Type: Article |
Times cited : (9)
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References (18)
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